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Typical Characteristics
100
10
T J = 25 o C
V GS DESCENDING
10V
6.5V
6V
5.5V
5V
4.5V
100
10
T J = 175 o C
V GS DESCENDING
10V
6V
5.5V
5V
4.5V
4V
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1
1
10
100
1
1
10
100
60
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. Output Characteristics
3.5
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 2. Output Characteristics
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
50 VDD = 100V
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
2.5
40
2.0
30
TJ = 175 o C
TJ = 25 o C
1.5
20
1.0
10
0
0.5
0
V GS = 10V, I D = 7.5A
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
-50
-25
0
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE ( C)
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. Transfer Characteristics
o
Figure 4. Normalized Drain To Source On
Resistance vs Junction Temperature
4000
1000
C ISS
15
12
I D = 15A
100V
250V
100
V GS = 0V, f = 1MHz
C OSS
C RSS
9
6
3
400V
10
1
10
100
0
0
1 0
20
3 0
40
50
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Capacitance vs Drain To Source
Voltage
Qg, GATE CHARGE (nC)
Figure 6. Gate Charge Waveforms For Constant
Gate Current
?2003 Fairchild Semiconductor Corporation
FDB15N50 Rev. C1
3
www.fairchildsemi.com
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